Title :
Plasma-assisted syntheses of diamond films and nanotubes
Author :
Chen, Weijie ; Xiao, Chengshan ; McColl, Derek ; Moewes, A. ; Hirose, Akira
Author_Institution :
Plasma Phys. Lab., Saskatchewan Univ., Saskatoon, Sask., Canada
Abstract :
Summary form only given, as follows. Experimental investigation of plasma-assisted syntheses of carbon based material, including diamond films and carbon nanotubes, has been carried out. The diamond films were deposited on silicon substrates using a hot filament device with an optional glow discharge capability. The optional glow discharge current was about 0.3 A. The substrate temperature was in the range 700-800/spl deg/C. The diamond films were grown at a pressure around 20 Torr in a vessel flushed with a mixture of hydrogen and methane gases.
Keywords :
Raman spectra; X-ray absorption spectra; X-ray diffraction; X-ray emission spectra; carbon nanotubes; diamond; plasma CVD; plasma deposition; scanning electron microscopy; transmission electron microscopy; C; Raman spectra; SEM; TEM; X-ray absorption spectra; X-ray diffraction; X-ray emission spectra; arc discharge; carbon nanotubes; concentric multiwalls; diamond films; glow discharge capability; grain sizes; high quality polycrystalline films; hot filament device; plasma-assisted syntheses; sharp diamond peak; Carbon nanotubes; Diamond-like carbon; Glow discharges; Organic materials; Plasma devices; Plasma materials processing; Plasma temperature; Semiconductor films; Silicon; Temperature distribution;
Conference_Titel :
Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
Conference_Location :
Banff, Alberta, Canada
Print_ISBN :
0-7803-7407-X
DOI :
10.1109/PLASMA.2002.1030287
