Title :
A novel RESURF LDMOS with embedded CB-layer
Author :
Xie, Junjie ; Han, Yan
Author_Institution :
Inst. of Microelectron. Technol. & Syst. Design, Zhejiang Univ., China
Abstract :
RESURF LDMOS resorts to lightly doping in the drift region to improve the breakdown voltage which inevitably increases the on-resistance. Here, a novel voltage-sustaining layer called the composite buffer layer (CB-layer for short) is proposed to be embedded in the RESURF LDMOS which significantly reduces the on-resistance, and the breakdown voltage is still high. The CB-layer consists of one n- and p-type layer, both of which are heavier doped to provide a good conductive channel for the carriers in the on-state. When the drift region is fully depleted in the off-state the whole residual charges in the CB-layer approximates to zero since they cancel each other out which means a high breakdown voltage is sustained
Keywords :
power MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor doping; CB-layer; RESURF LDMOS; breakdown voltage; composite buffer layer; conductive channel; drift region; drift region light doping; embedded CB-layer; n-type layer; off-state; on-resistance; p-type layer; voltage-sustaining layer; Breakdown voltage; Buffer layers; Doping; Equations; Microelectronics; Switching circuits; Transient response;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981450