Title :
Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs
Author :
Atanassova, E. ; Paskaleva, A.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. Sci., Sofia
Abstract :
The present status, successes, challenges and future of Ta2 O5, and mixed Ta2O5-based high-k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta2O5-based dielectrics (doped Ta2O5 and multicomponent high-k dielectrics) as well as of metal/high-k interface in MIM capacitor configuration are identified as critical factors for further reduction of EOT value below 1 nm
Keywords :
DRAM chips; capacitors; dielectric materials; nanostructured materials; tantalum compounds; EOT value; MIM capacitor configuration; Ta2O5; high-k dielectric materials; metal-high-k interface; multicomponent high-k dielectrics; nanoscale DRAM; storage capacitors; Atomic layer deposition; Capacitance; FETs; High K dielectric materials; High-K gate dielectrics; History; Leakage current; MIM capacitors; Microelectronics; Random access memory;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650894
