Electrically Active Defects at the Interface between

Author

Hurley, P.K. ; Cherkaoui, K.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork

fYear

0

fDate

0-0 0

Firstpage

53

Lastpage

58

Abstract

The density and energy distribution of electrically active interface defects in the (100)Si/SiO_x/HfO₂ system are presented. Experimental results are analysed for HfO₂ thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550degC

Keywords

MOCVD coatings; atomic layer deposition; defect states; dielectric thin films; hafnium compounds; interface states; passivation; silicon; silicon compounds; 350 to 550 C; Si-SiO-HfO₂; atomic layer deposition; defect density; electrically active interface defects; energy distribution; interface state; metal-organic chemical vapour deposition; semiconductor-oxide interface; silicon-hafnium dioxide thin film; surface passivation; Annealing; Atomic layer deposition; Chemical analysis; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Interface states; Passivation; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650895

Filename

1650895