Title :
Electrically Active Defects at the Interface between
Author :
Hurley, P.K. ; Cherkaoui, K.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork
Abstract :
The density and energy distribution of electrically active interface defects in the (100)Si/SiOx/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550degC
Keywords :
MOCVD coatings; atomic layer deposition; defect states; dielectric thin films; hafnium compounds; interface states; passivation; silicon; silicon compounds; 350 to 550 C; Si-SiO-HfO2; atomic layer deposition; defect density; electrically active interface defects; energy distribution; interface state; metal-organic chemical vapour deposition; semiconductor-oxide interface; silicon-hafnium dioxide thin film; surface passivation; Annealing; Atomic layer deposition; Chemical analysis; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Interface states; Passivation; Silicon; Transistors;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650895
