Title :
Capacitance Behavior of Nanometer FD SOI CMOS Devices with HfO2 High-K Gate Dielectric Considering Gate Tunneling Leakage Current
Author :
Kuo, J.B. ; Lin, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
This paper reports the CSG/CDG capacitance behavior of 100 nm fully-depleted (FD) SOI CMOS devices with HfO2 high-k gate dielectric considering gate tunneling leakage current. According to the 2D simulation results, a unique two-step CSG/CDG versus VG curve exists for the device with the 1.5 nm HfO2 gate dielectric due to the vertical displacement effect. Gate tunneling leakage current has a more impact on CDG as compared to CSG
Keywords :
MIS devices; capacitance; dielectric materials; leakage currents; nanostructured materials; semiconductor device breakdown; silicon-on-insulator; 1.5 nm; 100 nm; HfO2; capacitance behavior; gate tunneling leakage current; high-k gate dielectric materials; nanometer FD SOI CMOS devices; vertical displacement effect; CMOS technology; Capacitance; Dielectric devices; Hafnium oxide; High-K gate dielectrics; Leakage current; MOS devices; Nanoscale devices; Tunneling; Very large scale integration;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650896
