DocumentCode
2205197
Title
R-T relation of SnO2-Ag thin film in temperature pulsed operation mode
Author
Gao, Xiaoguang ; Li, Jianping ; He, Xiuli ; Jia, Jian
Author_Institution
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Beijing, China
fYear
2004
fDate
21-25 June 2004
Firstpage
103
Lastpage
106
Abstract
The SnO2-Ag thin film was prepared by magnetron sputtering on the Si-based membrane substrate embedded with a platinum micro heater. The sensitive properties of the film to H2S were investigated, and the R-T relation was measured in temperature pulsed operation mode and in simple temperature ramp mode in order to understand the sensitive properties. The results are used to discuss the effect of Ag additive on the R-T relation and sensitive properties of the film. The variation of film resistance shows that the silver promotes the chemical processes on the surface of films. The R-T relation measured in temperature pulsed operation mode can be used to understand the sensing properties of SnO2-Ag film.
Keywords
gas sensors; silver; sputtering; thin films; R-T relation; chemical processes; magnetron sputtering; sensitive property; silver; temperature pulsed operation mode; temperature ramp mode; thin film; Additives; Biomembranes; Electrical resistance measurement; Platinum; Pulse measurements; Sputtering; Substrates; Surface resistance; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Acquisition, 2004. Proceedings. International Conference on
Print_ISBN
0-7803-8629-9
Type
conf
DOI
10.1109/ICIA.2004.1373330
Filename
1373330
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