Title :
Flash memory technology development
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
As a new non-volatile semiconductor memory, FLASH was introduced by Masuoka in 1984. FLASH has non-volatility, in system rewritability, high density, low-cost and good reliability advantages. It is widely used on file storage, smart IC card, PLD, mobile phone, digital camera, DVD player and so on. This paper describes its programming, cell structure, FLASH array and reliability
Keywords :
MOS memory circuits; semiconductor device reliability; FLASH; FLASH array; FLASH reliability; PLD; file storage; flash memory cell structure; flash memory programming; flash memory technology development; good reliability; high density; low-cost; nonvolatile semiconductor memory; smart IC card; system rewritability; EPROM; Electrons; Ferroelectric films; Flash memory; Microelectronics; Nonvolatile memory; Random access memory; Semiconductor memory; Silicon; Tunneling;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981453
