DocumentCode
2205210
Title
RM3 integration of indium phosphide based 1.55 μm p-i-n photodetectors with silicon CMOS optical clock receiver circuits
Author
Atmaca, Eralp ; Drego, Nigel ; Boning, Duane ; Fonstad, Clifton G., Jr. ; Khai, Loke Wan ; Fatt, Yoon Soon
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Cambridge, MA, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
197
Lastpage
198
Abstract
Describes the development of an RM3 technique, Aligned pillar bonding (APB), and its application to optical clock distribution. APB integrates lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (around 300°C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns.
Keywords
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; silicon; thermal expansion; wafer bonding; 1.55 micron; 300 degC; InP-InGaAs; RM3 integration; aligned pillar bonding; electronic chips; lattice mismatched materials; p-i-n photodetectors; silicon CMOS optical clock receiver circuits; thermal expansion; wafer bonding; CMOS integrated circuits; Clocks; Indium phosphide; Integrated optics; Optical interconnections; Optical receivers; PIN photodiodes; Photodetectors; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239973
Filename
1239973
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