Title :
RM3 integration of indium phosphide based 1.55 μm p-i-n photodetectors with silicon CMOS optical clock receiver circuits
Author :
Atmaca, Eralp ; Drego, Nigel ; Boning, Duane ; Fonstad, Clifton G., Jr. ; Khai, Loke Wan ; Fatt, Yoon Soon
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Cambridge, MA, USA
Abstract :
Describes the development of an RM3 technique, Aligned pillar bonding (APB), and its application to optical clock distribution. APB integrates lattice mismatched materials using aligned, selective area wafer bonding at reduced temperature (around 300°C), which protects the electronic chips from the adverse effects of high temperatures, and reduces the thermal expansion mismatch concerns.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; silicon; thermal expansion; wafer bonding; 1.55 micron; 300 degC; InP-InGaAs; RM3 integration; aligned pillar bonding; electronic chips; lattice mismatched materials; p-i-n photodetectors; silicon CMOS optical clock receiver circuits; thermal expansion; wafer bonding; CMOS integrated circuits; Clocks; Indium phosphide; Integrated optics; Optical interconnections; Optical receivers; PIN photodiodes; Photodetectors; Silicon; Wafer bonding;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239973
