Title :
A high-endurance 96-Kbit FeRAM embedded in a smart card LSI using Ir/IrO2/PZT(MOCVD)/Ir ferroelectric capacitors
Author :
Mori, H. ; Tanabe, N. ; Seike, A. ; Takeuchi, H. ; Yamada, J. ; Miwa, T. ; Koike, H. ; Maejima, Y. ; Tatsumi, T. ; Kobayashi, S. ; Nakura, T. ; Sugiyama, H. ; Kasai, N. ; Hase, T. ; Hada, H. ; Toyoshima, H.
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
Abstract :
We have developed a logic-embedded 96-Kbit FeRAM macro that has low-voltage operation and high-endurance features for smart card applications. The smart card LSI was fabricated using a 0.35 μm-standard CMOS process with 3-level metallization and CMVP ferroelectric capacitors. The operation of the chip was confirmed at voltages from 2.7 to 5.5 V with 2.5 MHz clock cycle. By using Ir-based top and bottom electrodes, the fatigue endurance of the FeRAM was improved, which was confimed in burn-in tests. No failed bits were observed at accelerated conditions with 5.5 V and 150°C after 108 fatigue cycles
Keywords :
ferroelectric capacitors; ferroelectric ceramics; ferroelectric storage; ferroelectric switching; integrated circuit metallisation; iridium; iridium compounds; lead compounds; smart cards; 0.35 micron; 150 degC; 2.5 MHz; 2.7 to 5.5 V; 3-level metallization; 96 Kbit; CMOS process; CMVP ferroelectric capacitors; FeRAM; Ir-IrO2-PbZrO3TiO3-Ir; Ir-IrO2-PZT-Ir; Ir-based electrodes; accelerated conditions; burn-in tests; fatigue cycles; fatigue endurance; ferroelectric capacitors; high-endurance; logic-embedded FeRAM macro; low-voltage operation; smart card LSI; CMOS process; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; Large scale integration; Metallization; Nonvolatile memory; Random access memory; Smart cards;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981454
