Title :
High-performance InGaP power HBT technologies for wireless applications
Author :
Oka, T. ; Fujita, K. ; Shirakawa, K. ; Takahashi, N. ; Liu, Y. ; Yamashita, M. ; Kawamura, H. ; Hasegawa, M. ; Koh, H. ; Kagoshima, K. ; Kijima, H. ; Sakuno, K.
Author_Institution :
Devices Technol. Res. Labs., Sharp Corp., Nara, Japan
Abstract :
We review the technological features of our InGaP power HBTs for 5GHz wireless application. The features include self-aligned base-contact and base-mesa formation process, small-sized via holes located between multi-finger transistors, and bias and feedback circuits for the reduction of distortion. These technologies improve both gain and linearity, producing higher power added efficiency (PAE) in power amplifiers.
Keywords :
III-V semiconductors; MMIC power amplifiers; circuit feedback; gallium compounds; heterojunction bipolar transistors; indium compounds; 5 GHz; InGaP; InGaP power HBT technologies; PAE; base contact formation; base mesa formation; feedback circuits; higher power added efficiency; power amplifiers; transistors; wireless applications; Electrodes; Feedback circuits; Fingers; Heterojunction bipolar transistors; High power amplifiers; Linearity; MMICs; Power amplifiers; Power generation; Wide area networks;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239974
