DocumentCode :
2205264
Title :
Backside-emitter-structure C-up GaAs HBTs for small power amplifiers
Author :
Mochizuki, K. ; Tanaka, K. ; Takubo, C. ; Matsumoto, H. ; Tanoue, T. ; Ohbu, I.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
201
Lastpage :
202
Abstract :
In this paper, we have successfully fabricated ballast-free HBTs with L of 15 μm and Vce,.sat of 0.01 V by employing a backside-emitter-structure collector-up (C-up) configuration with ohmic collector contacts. Preliminary results on performance of these HBTs show their strong potential for application in small and highly efficient PA MMICs.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; heterojunction bipolar transistors; ohmic contacts; power amplifiers; semiconductor devices; 0.01 V; 15 micron; GaAs; GaAs HBTs; backside emitter structure collector up configuration; highly efficient PA MMICs; ohmic collector contacts; power amplifiers; Electrodes; Electron devices; Electronic ballasts; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Substrates; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239975
Filename :
1239975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205264
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