Title :
Gate Oxide Reliability for Nano-Scale CMOS
Author_Institution :
IBM Res. Div., Yorktown Heights, NY
Abstract :
The reliability of the gate oxide in microelectronics, i.e., the ability of a thin film of this material to retain its excellent dielectric properties while subjected to high electric fields, has been a perennial concern over the last 40-45 years. Two dominant gate oxide failure mechanisms, dielectric breakdown and the negative bias instability, have continued to cause concern as MOSFET devices have scaled to nanometer dimensions
Keywords :
CMOS integrated circuits; dielectric thin films; electric breakdown; integrated circuit reliability; nanoelectronics; MOSFET devices; dielectric breakdown; dielectric properties; gate oxide failure mechanism; gate oxide reliability; microelectronics; nanoscale CMOS; negative bias instability; thin films; Breakdown voltage; Circuits; Dielectric breakdown; Dielectric materials; Dielectric thin films; Electric breakdown; Failure analysis; Materials reliability; Microelectronics; Stress;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650900
