DocumentCode :
2205287
Title :
Low turn-on voltage InP/In0.7Ga0.3As/InP double heterojunction bipolar transistors
Author :
Kim, Y.M. ; Lai, K. ; Rodwell, M.J.W. ; Gossard, A.C.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA, USA
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
203
Lastpage :
204
Abstract :
In this paper, low Vbe HBTs were developed in the InP based material system, taking advantage of both its maturity and the high bandgap and breakdown field of an InP collector.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; semiconductor device breakdown; semiconductor devices; HBT; InP collector; InP-InGaAs-InP; InP/In0.7Ga0.3As/InP double heterojunction bipolar transistors; bandgap; breakdown field; Aerospace materials; Bipolar integrated circuits; DH-HEMTs; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium phosphide; Lattices; Leakage current; Low voltage; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239976
Filename :
1239976
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205287
بازگشت