Title :
Effects of Device Aging on Microelectronics Radiation Response and Reliability
Author :
Fleetwood, D.M. ; Rodgers, M.P. ; Tsetseris, L. ; Zhou, X.J. ; Batyrev, I. ; Wang, S. ; Schrimpf, R.D. ; Pantelides, S.T.
Author_Institution :
Vanderbilt Univ., Nashville, TN
Abstract :
Recent work is reviewed that shows that MOS and bipolar device radiation response can change significantly with aging time after device fabrication and/or packaging. Effects include changes in radiation response due to burn-in, pre-irradiation elevated temperature stress, and/or long-term storage. These changes are attributed experimentally and theoretically to the motion and reactions of water and other hydrogen-related species. Similar hydrogen-related reactions can also affect the long-term reliability of MOS devices and integrated circuits, as illustrated in detail here for negative-bias temperature instability
Keywords :
MIS devices; ageing; radiation effects; semiconductor device reliability; MOS radiation response; bipolar device radiation response; device aging; device burn in; device fabrication; hydrogen-related reaction; long-term storage; microelectronics radiation response; negative-bias temperature instability; pre-irradiation elevated temperature stress; Aging; Circuit testing; Integrated circuit reliability; Laboratories; MOS devices; Microelectronics; Semiconductor device manufacture; Semiconductor device packaging; Stress; Temperature;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650901
