Title :
Effects of device design on the thermal properties of InP-based HBTs
Author :
Li, J.C. ; Asbeck, P.M. ; Sokolich, M. ; Hussain, Tauqeer ; Hitko, D. ; Fields, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
Abstract :
The authors study the effects of thermal resistance in InP-based HBTs with different vertical and lateral design. 3D simulations and measurement results illustrate that significant differences in thermal resistance can arise with relatively small changes in device structure. These results also highlight the significant thermal gradients within the transistor.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal resistance; 3D simulations; InP; InP based HBTs; device designing effects; device structure; thermal gradients; thermal properties; thermal resistance; Current density; Dielectric substrates; Electric resistance; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Modeling; Temperature; Thermal management; Thermal resistance;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239977
