DocumentCode
2205342
Title
A look into the future for SiGe HBTs
Author
Harame, D.L. ; Freeman, G. ; Rieh, J. ; Jagannathan, B. ; Greenberg, D. ; Joseph, A. ; Johnson, J. ; Guarin, F. ; Yang, Z. ; Ahlgren, D. ; Cottrell, P. ; Dunn, J. ; Orner, B. ; Subbanna, S.
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
207
Lastpage
208
Abstract
In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device reliability; semiconductor materials; HBT performance; SiGe; SiGe HBT; reliability roadblocks; transistor; Current density; Degradation; Electromigration; Germanium silicon alloys; Heating; Heterojunction bipolar transistors; Impact ionization; Rivers; Silicon germanium; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239978
Filename
1239978
Link To Document