High Yield Front-etched Structure for CMOS Compatible IR Detector

Author

Li, Tie ; Liu, Yidong ; Zhou, Ping ; Wang, Yi ; Wang, Yuelin

Author_Institution

Chinese Acad. of Sci., Shanghai

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

500

Lastpage

502

Abstract

A front-etched structure for CMOS compatible IR detector is demonstrated and tested in this paper. Properly-arranged narrow windows in IR absorbing area are designed along the [100] direction on the (100) Si wafer. Experimental result shows that the design of the etching windows is characteristic of short release time and high IR sensitive area occupancy rate up to 50%. Based on CMOS compatible MEMS technology such as high precision mask, LPCVD, IBE dry etching, TMAH wet etching, a p-doped/ n-doped polycrystalline silicon thermopile is fabricated with such a structure It shows that the release time through TMAH silicon anisotropic etching is only 3 hours for an area of 500 mum times 500 mum with a yield better than 95%, which paves a way for researches of large scale IR array.

Keywords

CMOS integrated circuits; chemical vapour deposition; elemental semiconductors; etching; infrared detectors; micromechanical devices; photodetectors; silicon; (100) Si wafer; CMOS compatible IR detector; IBE dry etching; LPCVD; MEMS technology; Si; TMAH wet etching; etching windows; front-etched structure; large scale IR array; polycrystalline silicon thermopile; size 500 mum; time 3 hour; Anisotropic magnetoresistance; CMOS technology; Dry etching; Identity-based encryption; Infrared detectors; Large-scale systems; Micromechanical devices; Silicon; Testing; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2007 IEEE

Conference_Location

Atlanta, GA

ISSN

1930-0395

Print_ISBN

978-1-4244-1261-7

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2007.4388445

Filename

4388445