• DocumentCode
    2205354
  • Title

    An embedded NORST flash memory technology

  • Author

    Liyang, Pan ; Kai, Liu ; Ying, Zeng ; Yinzi, Guo ; Jun, Zhu

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    217
  • Abstract
    A NORST (NOR flash memory with a select-transistor) flash memory cell technology, which features a single 5 V power supply, a small cell size of 14.88 um2 and a good reliability, is demonstrated suitable for the embedded application under 1 Mbit. It can work with byte erasing mode or sector erasing mode according to different embedded memory systems, and has a good reliability. An embedded memory system and its process technology, as well as the process result, is described
  • Keywords
    CMOS memory circuits; NOR circuits; flash memories; integrated circuit reliability; 1 Mbit; 5 V; NOR flash memory; byte erasing mode; embedded NORST flash memory technology; embedded application; embedded memory systems; process technology; reliability; sector erasing mode; select-transistor; CMOS process; CMOS technology; Channel hot electron injection; Flash memory; Flash memory cells; Logic arrays; Microelectronics; Nonvolatile memory; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981459
  • Filename
    981459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205354