Title :
A Novel Vertical Impact Ionisation MOSFET (I-MOS) Concept
Author :
Abelein, U. ; Born, M. ; Bhuwalka, K.K. ; Schindler, M. ; Schmidt, M. ; Sulima, T. ; Eisele, I.
Author_Institution :
Inst. of Phys., Univ. der Bundeswehr Munich, Neubiberg
Abstract :
This paper presents experimental results of a novel vertical impact ionisation MOSFET (I-MOS). The device consists of a vertical gated triangular barrier diode (TBD), also know as planar doped barrier MOSFET (PDBFET). At low drain-source voltages the behaves like a conventional MOSFET. Drain-source voltages of more than 1.5 V activate gate controlled impact ionization in the sub-50 nm n-channel device, resulting in a subthreshold swing of 20 mV/decade at room temperature. The device shows an excellent ION/IOFF ratio of 2.5 times 108 in this mode
Keywords :
MOSFET; impact ionisation; semiconductor diodes; drain-source voltages; planar doped barrier MOSFET; vertical gated triangular barrier diode; vertical impact ionization; Doping; Electrodes; Impact ionization; Low voltage; MOSFET circuits; Molecular beam epitaxial growth; P-i-n diodes; Silicon; Temperature control; Threshold voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650910
