DocumentCode :
2205497
Title :
DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In0.51Ga0.49P/In0.15Ga0.85As/GaAs power pHEMTs
Author :
Yo-Sheng Lin ; Shey-Shi Lu
Author_Institution :
Department of Electrical Engineering, National Chi-Nan University
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
223
Lastpage :
224
Keywords :
Gallium arsenide; Indium gallium arsenide; Intrusion detection; Linearity; Noise measurement; PHEMTs; Power generation; Radio frequency; Scattering parameters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239986
Filename :
1239986
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205497
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