Title :
Tunnel FET: A CMOS Device for high Temperature Applications
Author :
Born, Mathias ; Bhuwalka, Krishna Kumar ; Schindler, Markus ; Abelein, Ulrich ; Schmidt, Matthias ; Sulima, Torsten ; Eisele, I.
Author_Institution :
Inst. of Phys., Univ. der Bundeswehr Munchen, Neubiberg
Abstract :
This paper presents experimental data on the temperature dependence of silicon tunnel field effect transistors (FETs) and corresponding simulations. It shows that the characteristics of tunnel transistors depend only weakly on temperature and that the "sub-threshold" swing is temperature independent. The behavior is compared to conventional MOSFETs
Keywords :
CMOS integrated circuits; field effect transistors; silicon; tunnel transistors; CMOS device; MOSFET; silicon tunnel field effect transistors; temperature dependence; tunnel FET; FETs; Temperature;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650911
