DocumentCode :
2205507
Title :
Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET
Author :
Takebe, M. ; Paul, N.C. ; Nakamura, K. ; Tametou, M. ; Iiyama, K. ; Takamiya, S.
Author_Institution :
Graduate School of Natural Science and Technology, Kanazawa University
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
225
Lastpage :
226
Keywords :
Capacitance-voltage characteristics; Gallium arsenide; Hysteresis; Insulation; Leakage current; MOSFET circuits; Oxidation; Surface treatment; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239987
Filename :
1239987
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205507
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