Title :
A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 μm analog and RFCMOS
Author :
Shao, Kai ; Chu, Sanford ; Chew, Kok-Wai ; Wu, Guan-Ping ; Ng, Chit-Hwei ; Tan, Nick ; Shen, Bruce ; Yin, Aiguo ; Zheng, Zhe-Yuan
Author_Institution :
Chartered Semicond. Mfg. Ltd., Singapore, Singapore
Abstract :
Two different material plates used for a high density metal-insulator-metal (MIM) capacitor (1.0 fF/μm2) top plate are studied. The two MIM capacitor process differences are compared. Their processes are very compatible with standard logic processes, and can be easily integrated into 0.35 μm down to 0.18 μm AlCu interconnection BEOL process. Both demonstrated good DC electrical parameter results. Their temperature, voltage coefficient and matching data fit meet the needs of most analog designers. A Q value >80 at 2.45 GHz was also achieved from the RF measurement
Keywords :
CMOS analogue integrated circuits; MIM devices; UHF integrated circuits; integrated circuit metallisation; integrated circuit technology; thin film capacitors; 0.18 to 0.35 micron; 2.45 GHz; AlCu; AlCu interconnection BEOL process; DC electrical parameter; RFCMOS ICs; RFICs; analog CMOS ICs; capacitors top plate; scaleable MIM capacitor process; Dielectric films; Etching; Inorganic materials; Integrated circuit interconnections; MIM capacitors; Parasitic capacitance; Radio frequency; Silicon compounds; Substrates; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981465
