A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 μm analog and RFCMOS

Author

Shao, Kai ; Chu, Sanford ; Chew, Kok-Wai ; Wu, Guan-Ping ; Ng, Chit-Hwei ; Tan, Nick ; Shen, Bruce ; Yin, Aiguo ; Zheng, Zhe-Yuan

Author_Institution

Chartered Semicond. Mfg. Ltd., Singapore, Singapore

Volume

1

fYear

2001

fDate

2001

Firstpage

243

Abstract

Two different material plates used for a high density metal-insulator-metal (MIM) capacitor (1.0 fF/μm²) top plate are studied. The two MIM capacitor process differences are compared. Their processes are very compatible with standard logic processes, and can be easily integrated into 0.35 μm down to 0.18 μm AlCu interconnection BEOL process. Both demonstrated good DC electrical parameter results. Their temperature, voltage coefficient and matching data fit meet the needs of most analog designers. A Q value >80 at 2.45 GHz was also achieved from the RF measurement

Keywords

CMOS analogue integrated circuits; MIM devices; UHF integrated circuits; integrated circuit metallisation; integrated circuit technology; thin film capacitors; 0.18 to 0.35 micron; 2.45 GHz; AlCu; AlCu interconnection BEOL process; DC electrical parameter; RFCMOS ICs; RFICs; analog CMOS ICs; capacitors top plate; scaleable MIM capacitor process; Dielectric films; Etching; Inorganic materials; Integrated circuit interconnections; MIM capacitors; Parasitic capacitance; Radio frequency; Silicon compounds; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981465

Filename

981465