Optimization of Q factor in spiral inductor on silicon

Author

Zhang, Zhengyuan ; Wen, Zhiyu ; Xu, Shilu ; Zhang, Zhengfan ; Chen, Gang ; Huang, Shanglian

Author_Institution

Dept. of Opticelectronic Eng., Chongqing Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

251

Abstract

In this paper, analyzing the Q factor of the spiral inductor is done by computer simulation, the results showed that the series resistance R_s dominates the Q factor of the spiral inductor, and that increasing the substrate silicon resistance is beneficial to increasing the Q factor and decreasing the substrate noise. To increase the Q factor of the spiral inductor, the experiments of decreasing via contact resistance and etching away the substrate silicon under the spiral inductor are done. The compatibility of the 3-dimensional bulk process with the planar IC process has been solved. Using the novel method, the inductor with high Q factor of 8.4 and low series resistance of 3 Ω is obtained, and substrate noise is reduced. This method can be used effectively in the design and manufacturing of high performance RF-ICs

Keywords

Q-factor; contact resistance; digital simulation; elemental semiconductors; etching; inductors; optimisation; semiconductor device models; semiconductor device noise; silicon; 3 ohm; 3-dimensional bulk process; Q factor; Si; computer simulation; etching; high performance RF IC; optimization; planar IC process; series resistance; silicon; spiral inductor; substrate noise; substrate silicon resistance; via contact resistance; Computer simulation; Contact resistance; Etching; Inductors; Integrated circuit noise; Manufacturing; Noise reduction; Q factor; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981467

Filename

981467