Title :
Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs by simulations with a quantum hydrodynamic transport model
Author :
Hontschel, J. ; Klix, W. ; Stenzel, R.
Author_Institution :
University of Applied Sciences Dresden
Keywords :
Circuit simulation; HEMTs; Hydrodynamics; Integrated circuit modeling; Logic devices; MODFETs; Monolithic integrated circuits; Quantum mechanics; Resonant tunneling devices; Voltage;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239989
