Intelligent molecular beam epitaxy system for cost-effective manufacturing of compound semiconductor epi-wafers

Author

Lee, Henry P.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

261

Abstract

In situ non-invasive process monitoring and control during semiconductor epitaxy has been recognized as an enabling technology that can potentially transform existing approaches to epi-wafer manufacturing. We review the evolution of sensor-based MBE systems over the past 10 years, and present recent results of a sensor-based MBE system operating under a production environment. Finally, we discuss some technical challenges towards the realization of a futuristic intelligent epitaxy system

Keywords

molecular beam epitaxial growth; process control; process monitoring; semiconductor device manufacture; sensors; compound semiconductor epi-wafers; cost-effective manufacturing; epi-wafer manufacturing; in situ noninvasive process monitoring; intelligent molecular beam epitaxy system; process control; production environment; semiconductor epitaxy; sensor-based MBE systems; Atomic measurements; Calibration; Condition monitoring; Epitaxial growth; Intelligent sensors; Molecular beam epitaxial growth; Semiconductor device manufacture; Sensor systems; Substrates; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981469

Filename

981469