Title :
Development of large diameter InP single crystal
Author :
Sun, Niefeng ; Wu, Xiawan ; Wu, Xiang ; Zhao, Youwen ; Cao, Lixin ; Zhao, Quan ; Guo, Weilian ; Zhang, Ji ; Zhao, Zhengping ; Bi, Keyun ; Sun, Tongnian
Author_Institution :
Hebei Semicond. Res. Inst., China
Abstract :
A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis and liquid encapsulated Czochralski (LEC) growth process. The in-situ process exhibits several advantages over the two-step process of compounding and growing in separate furnaces. About 2500-5000g stoichiometric poly InP is synthesized reproducibly by P-injection method in the high-pressure puller. Twin-f ree InP single crystals with diameter of 60-100 mm can be pulled after the synthesis
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; 2500 to 5000 g; 2500-5000 g stoichiometric InP; 60 to 100 mm; InP; InP single crystal; P-injection; Win-Free InP single crystals; diameter 60-100 mm; liquid encapsulated Czochralski growth process; phosphorus in-situ injection synthesis; synthesized reproducibly; Containers; Contamination; Crystalline materials; Electromagnetic wave absorption; Furnaces; Impurities; Indium phosphide; Optoelectronic devices; Semiconductor materials; Sun;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981470
