Title :
A UV Photodetector with Internal Gain Fabricated in Silicon on Sapphire CMOS
Author :
Marwick, Miriam Adlerstein ; Andreou, Andreas G.
Author_Institution :
Johns Hopkins Univ. Baltimore, Baltimore
Abstract :
We report on a photodetector fabricated in silicon on sapphire (SOS) CMOS with a responsivity of 20,000 AAV at a voltage bias of 100mV for a 100mum2. The transparent sapphire substrate enables backside illumination of the device for wavelengths ranging from only 150nm up to several microns. The device achieves its sensitivity by exploiting the internal amplification of an MOS transistor biased in subthreshold. The optimum channel doping of the device is determined through TCAD simulations of the device structure.
Keywords :
CMOS integrated circuits; amplification; integrated optoelectronics; photodetectors; semiconductor doping; silicon-on-insulator; technology CAD (electronics); TCAD simulations; UV photodetector; backside illumination; internal amplification; internal gain; optimum channel doping; silicon on sapphire CMOS; transparent sapphire substrate; Absorption; Doping; Fabrication; Lighting; MOSFETs; PIN photodiodes; Photodetectors; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2007.4388454
