Title :
The Fabrication of Single Electron Transistor by Polysilicon Thin Film and Point-Contact Lithography
Author :
Huang, Kuo-Dong ; Lin, Jyi-Tsong ; Hu, Shu-Fen ; Sung, Chin-Lung
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 degK and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated
Keywords :
Coulomb blockade; point contacts; proximity effect (lithography); semiconductor thin films; single electron transistors; Coulomb black; Coulomb oscillation; insulation layer; point-contact lithography; polysilicon thin film; proximity effect; single electron transistor; Crystallization; Electric variables; Fabrication; Insulation; Lithography; Proximity effect; Single electron transistors; Sputtering; Temperature; Thin film transistors;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650918
