New intrinsic gettering process in Czochralski-silicon wafer

Author

Li, Y.X. ; Liu, C.C. ; Guo, H.Y. ; Wang, X. ; Pan, M.X. ; Xu, Y.S. ; Yang, D.R. ; Que, D.L.

Author_Institution

Sch. of Mater. Sci. & Eng., Hebei Univ. of Technol., Tianjin, China

Volume

1

fYear

2001

fDate

2001

Firstpage

277

Abstract

A new intrinsic gettering (IG) process was established in Czochralski-silicon (CZSi) wafer subjected to a one-step annealing sequence based on the interaction of interstitial oxygen with the defects induced by neutron irradiation. The defects in Czochralski silicon wafer can be controlled by neutron irradiation. When irradiation flux changes from 5×10¹⁷ to 1.5×10¹⁸ cm^-2, combining with one-step high-temperature annealing procedure, the neutron irradiated wafers showed an excellent intrinsic gettering effect

Keywords

VLSI; annealing; crystal defects; crystal growth from melt; elemental semiconductors; getters; neutron effects; semiconductor growth; silicon; Czochralski-silicon wafer; Si; intrinsic gettering; neutron irradiated wafers; neutron irradiation; one-step annealing sequence; one-step high-temperature annealing; Annealing; Gettering; Heat treatment; Materials science and technology; Neutrons; Petroleum; Silicon; Surface treatment; Temperature; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981472

Filename

981472