Title :
Growth of crystal silicon by PMCZ method
Author :
Zhang, Weilian ; Tan, Baimei ; Li, Jiaxi ; Sun, Junsheng ; Zhang, Enhuai
Author_Institution :
Hebei Univ. of Technol., Tianjin, China
Abstract :
In this paper, we present our research on the growth of CZSi in a ring permanent magnetic field (PMCZ). It was shown that in the ring permanent magnetic field thermal convection in melt and centrifugal pumping flows due to crystal rotation can be strongly suppressed so that the fluctuations of temperature and micro-growth rate at interface are restrained effectively. The oxygen concentration in as-grown crystal is lower and the dopant is more homogeneous. The mechanism of the effect of the permanent magnetic field on the growth of CZSi is also discussed
Keywords :
convection; crystal growth from melt; elemental semiconductors; oxygen; semiconductor technology; silicon; zero gravity experiments; O concentration; O impurity; Si:O; centrifugal pumping; diffusion kinetics; fluctuations of temperature; melt; micro-growth; ring permanent magnetic field; thermal convection; Electromagnetic fields; Gravity; Impurities; Magnetic devices; Magnetic fields; Oxygen; Silicon; Temperature; Thermal conductivity; Thermal expansion;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981473
