Growth of Si-GaAs crystal under the equivalent micro-gravity

Author

Xu, Yuesheng ; Liu, Caichi ; Li, Yangxian ; Wang, Haiyun ; Zhang, Wen ; Hao, Qiuyan

Author_Institution

Inst. of Inf. Function Mater., Hebei Univ. of Technol., Tianjin, China

Volume

1

fYear

2001

fDate

2001

Firstpage

284

Abstract

When growth of GaAs by method of MLEC and the magnetic intensity is the critical value B₀, all macro-convections in melt were completely controlled and the transport of mass only depends on diffusion. In this case, Growth of GaAs is under the equivalent micro-gravity. The effective segregation coefficients of impurities trend to one. The homogeneity and micro zone homogeneity of crystals were greatly improved

Keywords

III-V semiconductors; convection; crystal growth from melt; diffusion; elemental semiconductors; gallium arsenide; impurities; integrated circuit technology; magnetic field effects; semiconductor technology; silicon; zero gravity experiments; GaAs; MLEC; Si-GaAs; Si-GaAs growth; convection; crystal growth from melt; diffusion; impurities; macroconvections; magnetic fields; melt; microgravity; segregation coefficients; Crystalline materials; Crystals; Gallium arsenide; Gravity; Impurities; Magnetic fields; Magnetic materials; Permanent magnets; Thermal force; Viscosity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981474

Filename

981474