Title :
Growth of Si-GaAs crystal under the equivalent micro-gravity
Author :
Xu, Yuesheng ; Liu, Caichi ; Li, Yangxian ; Wang, Haiyun ; Zhang, Wen ; Hao, Qiuyan
Author_Institution :
Inst. of Inf. Function Mater., Hebei Univ. of Technol., Tianjin, China
Abstract :
When growth of GaAs by method of MLEC and the magnetic intensity is the critical value B0, all macro-convections in melt were completely controlled and the transport of mass only depends on diffusion. In this case, Growth of GaAs is under the equivalent micro-gravity. The effective segregation coefficients of impurities trend to one. The homogeneity and micro zone homogeneity of crystals were greatly improved
Keywords :
III-V semiconductors; convection; crystal growth from melt; diffusion; elemental semiconductors; gallium arsenide; impurities; integrated circuit technology; magnetic field effects; semiconductor technology; silicon; zero gravity experiments; GaAs; MLEC; Si-GaAs; Si-GaAs growth; convection; crystal growth from melt; diffusion; impurities; macroconvections; magnetic fields; melt; microgravity; segregation coefficients; Crystalline materials; Crystals; Gallium arsenide; Gravity; Impurities; Magnetic fields; Magnetic materials; Permanent magnets; Thermal force; Viscosity;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981474
