A High 2LO-RF Isolation SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using Stacked-LO-Stage Topology

Author

Wu, Tzung-Han ; Meng, Chinchun

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu

fYear

2006

fDate

14-17 Nov. 2006

Firstpage

1

Lastpage

2

Abstract

A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (common mode feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave integrated circuits; microwave mixers; network topology; 3.3 V; 5.2 GHz; CMFB; HBT; SiGe; SiGe BiCMOS technology; common mode feedback; heterojunction bipolar transistor; knee-voltage characteristics; stacked-LO-stage topology; subharmonic Gilbert mixer; BiCMOS integrated circuits; Circuit topology; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Power generation; Radio frequency; Resistors; Silicon germanium; Voltage; 2LO-to-RF isolation; Gilbert mixer; Self-mixing; SiGe BiCMOS; Sub-harmonic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2006. 2006 IEEE Region 10 Conference

Conference_Location

Hong Kong

Print_ISBN

1-4244-0548-3

Electronic_ISBN

1-4244-0549-1

Type

conf

DOI

10.1109/TENCON.2006.343775

Filename

4142450