Title :
Evolution of silicon power devices and challenges to material limit
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki
Abstract :
The author first briefly reviews recent success of MOS gate power devices. The main objective is to predict, for the first time, the silicon limit characteristics of IGBTs for its on-resistance and SOA. The author also proposes ideal gate drive in order to realize the ultimate limit of high speed switching of MOS gate power devices. The results lead to new FOM, characterizing the high speed switching capability of various power devices
Keywords :
MIS devices; elemental semiconductors; insulated gate bipolar transistors; power semiconductor devices; semiconductor optical amplifiers; silicon; MOS gate power devices; Si; insulated gate bipolar transistors; semiconductor optical amplifiers; silicon power devices; Automobiles; DC motors; Insulated gate bipolar transistors; Low voltage; MOSFETs; Power integrated circuits; Power supplies; Silicon devices; Thyristors; Video recording;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650921
