As interstitials diffusion and its effects on native defects and electrical properties of undoped LECGaAs during annealing

Author

Ruixia, Yang ; Fuqiang, Zhang ; Nuofu, Chen ; Zhengping, Zhao

Author_Institution

Hebei Univ. of Technol., Tianjin, China

Volume

1

fYear

2001

fDate

2001

Firstpage

290

Abstract

Annealing has been carried out at 950°C under various As pressure for undoped(ND) semi-insulating(SI) LECGaAs. The effects of the annealing on native defects and the electrical properties were investigated. The experimental results indicate that after a annealing at 950°C for 14h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic acceptor defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing

Keywords

Hall mobility; III-V semiconductors; annealing; arsenic; crystal defects; diffusion; gallium arsenide; integrated circuit technology; semiconductor technology; substrates; 950 C; 950°C; As pressure; GaAs; Hall mobility; annealing; electrical properties; high temperature; intrinsic acceptor defects; native defects; outdiffusion; Annealing; Conductivity; Crystals; Electric variables measurement; Etching; Fabrication; Furnaces; Gallium arsenide; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981476

Filename

981476