DocumentCode
2205738
Title
Nanostructured thin films of Ba doped In2 O3 sensors for monitoring trace levels of NOx
Author
Gnanasekar, K.I. ; Shekhar, Chander ; Prabhu, E. ; Jayaraman, V. ; Gnanasekaran, T.
Author_Institution
Indira Gandhi Centre For Atomic Res., Kalpakkam
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
562
Lastpage
565
Abstract
In this paper, the results of barium oxide doped indium oxide films as sensor material for monitoring ppm levels of NOx (a mixture of NO and NO2) in ambient have been presented. The parameters for obtaining nanostructured and textured thin films of Ba doped In2O3 using pulsed laser deposition (PLD) technique have been optimized. These films are found capable of sensing down to 0.5 ppm NOx concentration in air. The optimum operating temperature of the sensor is found to be 300degC. Response and retrace times are typically 60 and 300 seconds respectively. This sensor did not show significant response to hydrogen and petroleum gas up to 5000 ppm each.
Keywords
barium; chemical variables measurement; gas sensors; indium compounds; nanostructured materials; nitrogen compounds; pulsed laser deposition; thin films; In2O3:Ba; chemical concentration; chemical variables measurement; gas sensor; nanostructured thin films; nitrogen oxide compounds; pulsed laser deposition; temperature 300 C; textured thin films; trace level monitoring; Barium; Indium; Monitoring; Nanostructured materials; Optical pulses; Pulsed laser deposition; Sputtering; Temperature sensors; Time factors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2007 IEEE
Conference_Location
Atlanta, GA
ISSN
1930-0395
Print_ISBN
978-1-4244-1261-7
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.4388460
Filename
4388460
Link To Document