• DocumentCode
    2205738
  • Title

    Nanostructured thin films of Ba doped In2O3 sensors for monitoring trace levels of NOx

  • Author

    Gnanasekar, K.I. ; Shekhar, Chander ; Prabhu, E. ; Jayaraman, V. ; Gnanasekaran, T.

  • Author_Institution
    Indira Gandhi Centre For Atomic Res., Kalpakkam
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    562
  • Lastpage
    565
  • Abstract
    In this paper, the results of barium oxide doped indium oxide films as sensor material for monitoring ppm levels of NOx (a mixture of NO and NO2) in ambient have been presented. The parameters for obtaining nanostructured and textured thin films of Ba doped In2O3 using pulsed laser deposition (PLD) technique have been optimized. These films are found capable of sensing down to 0.5 ppm NOx concentration in air. The optimum operating temperature of the sensor is found to be 300degC. Response and retrace times are typically 60 and 300 seconds respectively. This sensor did not show significant response to hydrogen and petroleum gas up to 5000 ppm each.
  • Keywords
    barium; chemical variables measurement; gas sensors; indium compounds; nanostructured materials; nitrogen compounds; pulsed laser deposition; thin films; In2O3:Ba; chemical concentration; chemical variables measurement; gas sensor; nanostructured thin films; nitrogen oxide compounds; pulsed laser deposition; temperature 300 C; textured thin films; trace level monitoring; Barium; Indium; Monitoring; Nanostructured materials; Optical pulses; Pulsed laser deposition; Sputtering; Temperature sensors; Time factors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2007 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-1261-7
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2007.4388460
  • Filename
    4388460