DocumentCode :
2205738
Title :
Nanostructured thin films of Ba doped In2O3 sensors for monitoring trace levels of NOx
Author :
Gnanasekar, K.I. ; Shekhar, Chander ; Prabhu, E. ; Jayaraman, V. ; Gnanasekaran, T.
Author_Institution :
Indira Gandhi Centre For Atomic Res., Kalpakkam
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
562
Lastpage :
565
Abstract :
In this paper, the results of barium oxide doped indium oxide films as sensor material for monitoring ppm levels of NOx (a mixture of NO and NO2) in ambient have been presented. The parameters for obtaining nanostructured and textured thin films of Ba doped In2O3 using pulsed laser deposition (PLD) technique have been optimized. These films are found capable of sensing down to 0.5 ppm NOx concentration in air. The optimum operating temperature of the sensor is found to be 300degC. Response and retrace times are typically 60 and 300 seconds respectively. This sensor did not show significant response to hydrogen and petroleum gas up to 5000 ppm each.
Keywords :
barium; chemical variables measurement; gas sensors; indium compounds; nanostructured materials; nitrogen compounds; pulsed laser deposition; thin films; In2O3:Ba; chemical concentration; chemical variables measurement; gas sensor; nanostructured thin films; nitrogen oxide compounds; pulsed laser deposition; temperature 300 C; textured thin films; trace level monitoring; Barium; Indium; Monitoring; Nanostructured materials; Optical pulses; Pulsed laser deposition; Sputtering; Temperature sensors; Time factors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1930-0395
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.4388460
Filename :
4388460
Link To Document :
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