Title :
High-k gate dielectrics for scaled CMOS technology
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
This paper summarizes our results on several high-k gate dielectrics, including TiO2, Ta2O5, ZrO 2, HfO2, and Al-doped varieties of the above. Among them, TiO2 and Ta2O5 have higher dielectric constants than others, while ZrO2 and HfO2 are thermodynamically more stable against the formation of SiO 2 on Si, and the addition of Al raises the temperature for crystallization for all of them. Both MOS capacitors and MOSFET´s have been fabricated with these high-k gate dielectrics, and their properties have been studied. We have also utilized the temperature-dependent IN characteristics of these high-k dielectrics to study their current conduction mechanisms and to construct their energy band diagrams
Keywords :
CMOS integrated circuits; MOS capacitors; MOSFET; band structure; crystallisation; dielectric thin films; electrical conductivity; oxidation; permittivity; semiconductor device measurement; thermal stability; thermodynamic properties; Al-doped varieties; HfO2; HfO2:Al; MOS capacitors; MOSFET´s; SiO2-Si; Ta2O5; Ta2O5:Al; TiO2; TiO2:Al; ZrO2; ZrO2:Al; crystallization; current conduction; dielectric constants; energy band diagrams; high-k gate dielectrics; scaled CMOS technology; temperature-dependent I-V characteristics; thermodynamically stable dielectrics; Buffer layers; CMOS technology; Dielectric substrates; Hafnium oxide; High-K gate dielectrics; Leakage current; Silicon; Temperature dependence; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981481
