• DocumentCode
    2205888
  • Title

    Investigation of ultra-thin SiO2 gate oxide characteristics

  • Author

    Tan, Jingrong ; Xu, Xiaoyan ; Gao, Wenyu ; Ru, Huang ; Xing, Zhang

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    329
  • Abstract
    The purpose of this paper is to analyze the characteristics of ultra-thin gate oxide The oxide breakdown behavior and leakage current of 3-6 nm ultrathin gate oxide was mainly investigated. It shows that the thinner the gate oxide is, the higher the breakdown electric field is. Also when the thickness of the gate oxide is lower than 6 nm, there is soft breakdown under Constant Current Stress (CCS). After soft breakdown occurs, the Stress Induced Leakage Current (SILC) will be obviously enhanced. The influence of different gate oxide thickness, MOS capacitance areas and current stresses on the oxide breakdown behavior was discussed in detail
  • Keywords
    MOS capacitors; MOSFET; capacitance; dielectric thin films; leakage currents; semiconductor device breakdown; silicon compounds; MOS capacitance areas; SILQ; SiO2 gate oxide characteristics; breakdown electric field; constant current stress; oxide breakdown behavior; oxide leakage current; soft breakdown; stress induced leakage current; ultra-thin gate oxide; CMOS technology; Dielectric devices; Dielectric substrates; Electric breakdown; Integrated circuit technology; Leakage current; Oxidation; Silicon; Stress; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981487
  • Filename
    981487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205888