Title :
Investigation of ultra-thin SiO2 gate oxide characteristics
Author :
Tan, Jingrong ; Xu, Xiaoyan ; Gao, Wenyu ; Ru, Huang ; Xing, Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The purpose of this paper is to analyze the characteristics of ultra-thin gate oxide The oxide breakdown behavior and leakage current of 3-6 nm ultrathin gate oxide was mainly investigated. It shows that the thinner the gate oxide is, the higher the breakdown electric field is. Also when the thickness of the gate oxide is lower than 6 nm, there is soft breakdown under Constant Current Stress (CCS). After soft breakdown occurs, the Stress Induced Leakage Current (SILC) will be obviously enhanced. The influence of different gate oxide thickness, MOS capacitance areas and current stresses on the oxide breakdown behavior was discussed in detail
Keywords :
MOS capacitors; MOSFET; capacitance; dielectric thin films; leakage currents; semiconductor device breakdown; silicon compounds; MOS capacitance areas; SILQ; SiO2 gate oxide characteristics; breakdown electric field; constant current stress; oxide breakdown behavior; oxide leakage current; soft breakdown; stress induced leakage current; ultra-thin gate oxide; CMOS technology; Dielectric devices; Dielectric substrates; Electric breakdown; Integrated circuit technology; Leakage current; Oxidation; Silicon; Stress; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981487
