DocumentCode
2205898
Title
Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics
Author
Liu, Xiaoyan ; Lou, Shuzuo ; Xia, Zhiliang ; Guo, Dechao ; Zhu, Huiwen ; Kang, Jinfeng ; Han, Ruqi
Author_Institution
Inst. for Microelectron., Peking Univ., Beijing, China
Volume
1
fYear
2001
fDate
2001
Firstpage
333
Abstract
The extensive simulations are carried out to study impact of high K dielectric both on the channel and the source/drain extension region of a typical 70nm MOSFET by the two dimensional device simulator ISE. The key factors affecting the device characteristics are investigated. The different structures of high K gate dielectric MOSFETs including SOI MOSFET and recess channel MOSFET are also simulated
Keywords
MOSFET; permittivity; semiconductor device models; silicon-on-insulator; 100 nm; SOI MOSFET; device characteristics; high-k gate dielectrics; recess channel MOSFET; source/drain extension region; sub-100nm MOSFETs; two dimensional device simulator ISE; Degradation; Dielectric constant; Dielectric devices; Dielectric materials; High K dielectric materials; High-K gate dielectrics; MOSFETs; Microelectronics; Permittivity; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981488
Filename
981488
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