Title :
Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics
Author :
Liu, Xiaoyan ; Lou, Shuzuo ; Xia, Zhiliang ; Guo, Dechao ; Zhu, Huiwen ; Kang, Jinfeng ; Han, Ruqi
Author_Institution :
Inst. for Microelectron., Peking Univ., Beijing, China
Abstract :
The extensive simulations are carried out to study impact of high K dielectric both on the channel and the source/drain extension region of a typical 70nm MOSFET by the two dimensional device simulator ISE. The key factors affecting the device characteristics are investigated. The different structures of high K gate dielectric MOSFETs including SOI MOSFET and recess channel MOSFET are also simulated
Keywords :
MOSFET; permittivity; semiconductor device models; silicon-on-insulator; 100 nm; SOI MOSFET; device characteristics; high-k gate dielectrics; recess channel MOSFET; source/drain extension region; sub-100nm MOSFETs; two dimensional device simulator ISE; Degradation; Dielectric constant; Dielectric devices; Dielectric materials; High K dielectric materials; High-K gate dielectrics; MOSFETs; Microelectronics; Permittivity; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981488
