Comparison of measured and simulated characteristics of boron implanted 4H-SiC DiMOSFET

Author

Kim, S.C. ; Bahng, W. ; Kim, K.H. ; Kang, I.H. ; Kim, S.J. ; Kim, N.K.

Author_Institution

Power Semicond. Group, Korea Electrotechnol. Res. Inst., Changwon

fYear

0

fDate

0-0 0

Firstpage

199

Lastpage

202

Abstract

The vertical double implanted MOSFET (DiMOSFET) were fabricated on 4H-SiC(0001) and the device characteristics were investigated. The sheet resistance of the Ni/Ti metals on the P-well region were 41.7kOmega/square and 12.7kOmega/squarefor post ion implantation annealed at 1600degC and 1700degC, respectively. The DiMOSFET device had blocking capability of 980V and the threshold voltage of 0.5V. However abnormal characteristics were observed in the forward characteristics. In this paper, we focused on the narrowing effect of JFET region due to lateral diffusion of implanted boron ions. The structures with narrow or closed JFET at the bottom region showed drain voltage shift

Keywords

MOSFET; annealing; ion implantation; nickel alloys; silicon compounds; titanium alloys; wide band gap semiconductors; 0.5 V; 1600 C; 1700 C; 980 V; JFET region; NiTi; P-well region; SiC; annealing; boron implanted DiMOSFET; lateral diffusion; post ion implantation; sheet resistance; vertical double implanted MOSFET; Aluminum; Boron; Doping; Ion implantation; MOSFET circuits; Power MOSFET; Rough surfaces; Silicon carbide; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650930

Filename

1650930