DocumentCode
2205912
Title
IGBT Behavioral PSPICE Model
Author
Asparuhova, Katya ; Grigorova, Tsvetana
Author_Institution
Dept. of Electron. & Electron. Technol., Sofia Tech. Univ.
fYear
0
fDate
0-0 0
Firstpage
203
Lastpage
206
Abstract
Behavioral IGBT macromodel for OrCad PSPICE simulator is presented. The model is parameterized and it is implemented as a subcircuit in the simulator. The nonlinear DC equations and voltage-controlled capacitors are precisely represented using ABM method, which is resulting in good accuracy. The static I-V characteristics offered by the behavioral model are shown. The tailing of the anode currents simulated by the behavioral model at a constant anode voltage-switching test are given. The good agreement between the simulation and experimental results can be observed in the paper
Keywords
SPICE; insulated gate bipolar transistors; semiconductor device models; ABM method; PSPICE model; anode currents; constant anode voltage-switching test; insulated gate bipolar transistors; nonlinear DC equations; static I-V characteristics; voltage-controlled capacitors; Anodes; Capacitors; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; MOSFET circuits; Nonlinear equations; Polynomials; SPICE; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2006 25th International Conference on
Conference_Location
Belgrade
Print_ISBN
1-4244-0117-8
Type
conf
DOI
10.1109/ICMEL.2006.1650931
Filename
1650931
Link To Document