Title :
IGBT Behavioral PSPICE Model
Author :
Asparuhova, Katya ; Grigorova, Tsvetana
Author_Institution :
Dept. of Electron. & Electron. Technol., Sofia Tech. Univ.
Abstract :
Behavioral IGBT macromodel for OrCad PSPICE simulator is presented. The model is parameterized and it is implemented as a subcircuit in the simulator. The nonlinear DC equations and voltage-controlled capacitors are precisely represented using ABM method, which is resulting in good accuracy. The static I-V characteristics offered by the behavioral model are shown. The tailing of the anode currents simulated by the behavioral model at a constant anode voltage-switching test are given. The good agreement between the simulation and experimental results can be observed in the paper
Keywords :
SPICE; insulated gate bipolar transistors; semiconductor device models; ABM method; PSPICE model; anode currents; constant anode voltage-switching test; insulated gate bipolar transistors; nonlinear DC equations; static I-V characteristics; voltage-controlled capacitors; Anodes; Capacitors; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; MOSFET circuits; Nonlinear equations; Polynomials; SPICE; Threshold voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650931
