Nanoporous dielectric materials for advanced CMOS

Author

Gessner, Thomas ; Bohuslavová, Andrea ; Schulz, Stefan E.

Author_Institution

Center of Microtechnology, Technische Univ. Chemnitz, Germany

Volume

1

fYear

2001

fDate

2001

Firstpage

343

Abstract

Nanoporous silica are promising candidates to achieve the lowest dielectric constants. Nevertheless, integration of this material requires intensive optimization of material properties like mechanical stability and the investigation of the compatibility with currently used interconnect process technology. We have shown paths to provide cap layers for prevention of interactions by PECVD and investigated interactions of sputtered and CVD barriers with the nanoporous material

Keywords

CMOS digital integrated circuits; dielectric materials; dielectric thin films; elastic moduli; integrated circuit interconnections; mechanical stability; permittivity; plasma CVD coatings; porous materials; silicon compounds; sol-gel processing; sputtered coatings; CVD barriers; PECVD; SiO₂; advanced CMOS; cap layers; dielectric constant; integration; interconnect process technology; mechanical stability; nanoporous dielectric materials; nanoporous silica; sol gel processing; sputtered barriers; Conducting materials; Copper; Delay; Dielectric constant; Dielectric materials; Inorganic materials; Integrated circuit modeling; Nanoporous materials; Polymers; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981490

Filename

981490