Title :
Nanoporous dielectric materials for advanced CMOS
Author :
Gessner, Thomas ; Bohuslavová, Andrea ; Schulz, Stefan E.
Author_Institution :
Center of Microtechnology, Technische Univ. Chemnitz, Germany
Abstract :
Nanoporous silica are promising candidates to achieve the lowest dielectric constants. Nevertheless, integration of this material requires intensive optimization of material properties like mechanical stability and the investigation of the compatibility with currently used interconnect process technology. We have shown paths to provide cap layers for prevention of interactions by PECVD and investigated interactions of sputtered and CVD barriers with the nanoporous material
Keywords :
CMOS digital integrated circuits; dielectric materials; dielectric thin films; elastic moduli; integrated circuit interconnections; mechanical stability; permittivity; plasma CVD coatings; porous materials; silicon compounds; sol-gel processing; sputtered coatings; CVD barriers; PECVD; SiO2; advanced CMOS; cap layers; dielectric constant; integration; interconnect process technology; mechanical stability; nanoporous dielectric materials; nanoporous silica; sol gel processing; sputtered barriers; Conducting materials; Copper; Delay; Dielectric constant; Dielectric materials; Inorganic materials; Integrated circuit modeling; Nanoporous materials; Polymers; Silicon compounds;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981490
