Title :
A photosensitive low-k interlayer-dielectric film for ULSIs
Author :
Kikkawa, Takamaro
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
A photosensitive interlayer dielectric film was developed for a future ULSI multilevel interconnect technology. A photosensitive methylsilsesquiazane with a low-dielectric constant was synthesized. It could be patterned by use of either electron beam lithography or ultraviolet lithography. It is demonstrated that the smallest feature size of 50 nm for damascene lines and via holes could be directly patterned in the films by the electron beam lithography
Keywords :
ULSI; dielectric thin films; electron beam lithography; integrated circuit interconnections; organic compounds; ultraviolet lithography; 50 nm; Cu interconnects; FTIR spectra; ULSI multilevel interconnect; damascene lines; electron beam lithography; photosensitive interlayer dielectric film; photosensitive methylsilsesquiazane; size 50 nm; ultraviolet lithography; Copper; Costs; Dielectric constant; Dielectric films; Electron beams; Integrated circuit interconnections; Lithography; Polymers; Scanning electron microscopy; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981491
