DocumentCode :
2206050
Title :
Exploring Silicon Carbide For Thermal Infrared Radiators
Author :
Chen, Li ; Mehregany, Mehran
Author_Institution :
Case Western Reserve Univ., Cleveland
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
620
Lastpage :
623
Abstract :
A thermal infrared radiator (blackbody) capable of fast thermal cycling is realized for pulsed operation at high frequency using elements from heavily-doped LPCVD poly-SiC. High emissivity, high thermal conductivity, low thermal mass and excellent mechanical robustness of poly-SiC enable this development. Poly-SiC´s peak emission wavelength falls in the range of short wavelength infrared; devices are pulsed at frequencies up to 100 Hz with modulation depth near 50%. Materials analysis examining the surfaces of pre-and post-heated emitter elements has been performed using Auger electron spectroscopy (AES). Device reliability study has been carried out, including the dependence on thermal cycling/operation of poly-SiC´s emissive, thermal, electrical and mechanical properties relevant to the presented devices.
Keywords :
Auger electron spectra; blackbody radiation; emissivity; infrared sources; semiconductor device reliability; semiconductor thin films; silicon compounds; thermal conductivity; wide band gap semiconductors; Auger electron spectroscopy; IR source material; SiC; device reliability; emissivity; frequency 100 Hz; heavily-doped LPCVD poly-silicon carbide; mechanical robustness; thermal conductivity; thermal cycling; thermal infrared radiator; thermal mass; Conducting materials; Electron emission; Frequency; Mechanical factors; Performance analysis; Pulse modulation; Robustness; Silicon carbide; Spectroscopy; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1930-0395
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.4388475
Filename :
4388475
Link To Document :
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