Multi-generation CVD low κ films for 0.13 μm and beyond

After several delays in the implementation of κ<3.0 inter metal dielectric, the semiconductor industry has finally begun to use these low κ materials in manufacturing in 2001. After several years of intense industry wide evaluation and assessment, the most critical requirements for these materials were identified to be high mechanical strength, low cost, high productivity and extendibility to at least another generation. CVD low κ films, IMD film black diamond (BD) and barrier/etch stop film BLOκ, have become the materials of choice for 0.13 μm an below generation IMD because of their silicon oxide like materials properties, proven manufacturability using time-tested familiar PECVD tool sets, and the recently proven extendibility to κ<2.5. This paper focuses on the characteristics and performance of these materials both in Cu damascene integration and in production environment