Title :
Atomic layer deposition
Author :
Wang, Shi-Qing ; Sneh, Ofter ; Londergan, Ana ; Clark-Phelps, Bob ; Lee, Eddie ; Seidel, Tom
Author_Institution :
Genus Inc., Sunnyvale, CA, USA
Abstract :
The current status of ALD technology will be reviewed. In addition, engineered nanolaminate or alloy films of both dielectric and metal materials will be demonstrated and their applications discussed
Keywords :
ULSI; atomic layer epitaxial growth; laminates; nanostructured materials; vacuum deposited coatings; 50 A; ALD technology; MEMS; ULSI device dimensions; alloy films; atomic layer deposition; atomic-scale precision; data storage; dielectric materials; film thickness control; flat-panel displays; high density amorphous films; metal materials; nanolaminates; wafer uniformity; Amorphous materials; Atomic layer deposition; Dielectric materials; Grain boundaries; Inorganic materials; Material properties; Memory; Thickness control; USA Councils; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981494
