DocumentCode
2206075
Title
Atomic layer deposition
Author
Wang, Shi-Qing ; Sneh, Ofter ; Londergan, Ana ; Clark-Phelps, Bob ; Lee, Eddie ; Seidel, Tom
Author_Institution
Genus Inc., Sunnyvale, CA, USA
Volume
1
fYear
2001
fDate
2001
Abstract
The current status of ALD technology will be reviewed. In addition, engineered nanolaminate or alloy films of both dielectric and metal materials will be demonstrated and their applications discussed
Keywords
ULSI; atomic layer epitaxial growth; laminates; nanostructured materials; vacuum deposited coatings; 50 A; ALD technology; MEMS; ULSI device dimensions; alloy films; atomic layer deposition; atomic-scale precision; data storage; dielectric materials; film thickness control; flat-panel displays; high density amorphous films; metal materials; nanolaminates; wafer uniformity; Amorphous materials; Atomic layer deposition; Dielectric materials; Grain boundaries; Inorganic materials; Material properties; Memory; Thickness control; USA Councils; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981494
Filename
981494
Link To Document