Title :
Development of copper CMP slurry
Author :
Xin, Wang ; Hongying, Wang ; Yuling, Liu
Author_Institution :
Hebei Univ. of Technol., Tianjin, China
Abstract :
This paper presents a formulation of slurry for Cu CMP, in which colloidal silica (SiO2) was used as the abrasive particles. Since Cu is chemically active we tried to planarize Cu by "soft friction" using colloidal silica (size of 20nm), with the selected oxidizer in which metal ions aren\´t involved, and organic amine is used as the complex agent. Silicon sol (size of 20nm) is softer than Al2 O3, has no contamination, and better dispersity and suspension with little scratching. Moreover, adding non-metal ions to the chelate can compress contamination of metal ions and adsorption of particles, so that the surface is smooth and bright
Keywords :
chemical mechanical polishing; copper; integrated circuit metallisation; silicon compounds; Cu; Cu CMP slurry formulation; SiO2; abrasive particles; colloidal silica; organic amine; planarize Cu; soft friction; Abrasives; Chemical technology; Copper; Inorganic materials; Integrated circuit interconnections; Organic chemicals; Planarization; Silicon compounds; Slurries; Surface contamination;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981496
