Title :
Study on key technologies of copper metallization in ULSI
Author :
Yang, Xia ; He, Qian ; Guo-hai, Bang ; Wang Wen-quan ; De-xin, Wu
Author_Institution :
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Abstract :
In this paper we discuss the current damasense processes of copper metallization. The study will be focus on some key technologies such as novel barrier, copper deposition and chemical mechanical polishing (CMP) processes
Keywords :
ULSI; chemical mechanical polishing; copper; electroplating; integrated circuit metallisation; Cu; Cu metallization; ULSI; chemical mechanical polishing; damasense processes; deposition; Annealing; Capacitors; Chemical technology; Copper; Metal-insulator structures; Metallization; Nitrogen; Sputtering; Thermal stresses; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981497
