DocumentCode :
2206142
Title :
Study on key technologies of copper metallization in ULSI
Author :
Yang, Xia ; He, Qian ; Guo-hai, Bang ; Wang Wen-quan ; De-xin, Wu
Author_Institution :
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
372
Abstract :
In this paper we discuss the current damasense processes of copper metallization. The study will be focus on some key technologies such as novel barrier, copper deposition and chemical mechanical polishing (CMP) processes
Keywords :
ULSI; chemical mechanical polishing; copper; electroplating; integrated circuit metallisation; Cu; Cu metallization; ULSI; chemical mechanical polishing; damasense processes; deposition; Annealing; Capacitors; Chemical technology; Copper; Metal-insulator structures; Metallization; Nitrogen; Sputtering; Thermal stresses; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.981497
Filename :
981497
Link To Document :
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