DocumentCode
2206197
Title
The CMP study of silica dielectric in ULSI manufacturing
Author
Tan, Baimei ; Liu, Yuling ; Li, Weiwei ; Jiang, Jianguo
Author_Institution
Hebei Univ. of Technol., Tianjin, China
Volume
1
fYear
2001
fDate
2001
Firstpage
379
Abstract
The mechanism and the choice of processing conditions of silica dielectrics in ULSI manufacturing were studied. The ways of increasing the polishing rate and improving the surface conditions by using a chemical method were suggested. It was shown that small size fumed silica in slurry could solve the problem of surface scratching during dielectric CMP processing. The pH is important to the polish rate, high pH is in favor of decreasing deposits and increasing the polish rate. The polish rate with diamine is higher than with an alkali amine
Keywords
ULSI; chemical mechanical polishing; integrated circuit interconnections; silicon compounds; CMP; SiO2; ULSI manufacturing; pH; polishing rate; silica dielectric; surface scratching; Abrasives; Chemicals; Dielectrics; Home appliances; Manufacturing processes; Planarization; Random access memory; Silicon compounds; Slurries; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981499
Filename
981499
Link To Document