Power losses and thermal modeling of a 4H-SiC VJFET inverter

This paper presents a set of models for a SiC VJFET inverter from device level to system level. The simulations for SiC and Si inverters indicated that the SiC inverter has a much lower junction temperature, much less power loss, significantly enhanced energy efficiency, and a dramatic reduction in heatsink size as compared with the Si inverter. This demonstrated the technical feasibility and benefits of the all-SiC inverter. In addition to the simulations, experimental tests have also been conducted on SiC VJFETs and Schottky diodes for parameter extraction.