Power losses and thermal modeling of a 4H-SiC VJFET inverter

Author

Zhang, Hui ; Tolbert, Leon M. ; Ozpineci, Burak ; Chinthavali, Madhu S.

Author_Institution

Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA

Volume

4

fYear

2005

fDate

2-6 Oct. 2005

Firstpage

2630

Abstract

This paper presents a set of models for a SiC VJFET inverter from device level to system level. The simulations for SiC and Si inverters indicated that the SiC inverter has a much lower junction temperature, much less power loss, significantly enhanced energy efficiency, and a dramatic reduction in heatsink size as compared with the Si inverter. This demonstrated the technical feasibility and benefits of the all-SiC inverter. In addition to the simulations, experimental tests have also been conducted on SiC VJFETs and Schottky diodes for parameter extraction.

Keywords

Schottky diodes; energy conservation; heat sinks; invertors; junction gate field effect transistors; losses; silicon compounds; Schottky diode; Si; Si inverter; SiC; VJFET inverter; energy efficiency; heat sink; junction temperature; parameter extraction; power losses; silicon carbide; thermal modeling; Laboratories; MOSFETs; Photonic band gap; Power system modeling; Prototypes; Pulse width modulation inverters; Schottky diodes; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005

ISSN

0197-2618

Print_ISBN

0-7803-9208-6

Type

conf

DOI

10.1109/IAS.2005.1518831

Filename

1518831